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  Datasheet File OCR Text:
 Bulletin I0142J 01/01
S1233
PHASE CONTROL THYRISTORS
Junction Size Wafer Size VRRM / VDRM Class Passivation Process Reference IR Packaged Part : : : : :
Square 340 mils - IR343SG12H/ S1233 4" 1200 V Glassivated MESA 50RIA Series
Major Ratings and Characteristics
Parameters
VTM Typical On-state Voltage
Units
1.2 V 1200 V 5 to 100 mA 2V 5 to 200 mA 400 mA
Test Conditions
TJ = 25C, I T = 25 A TJ = 25C, I DRM /IRRM = 100 A
(1)
VRRM/ VDRM Direct and Reverse Breakdown Voltage IGT VGT IH IL Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current
TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 15 KA) Cr - Ni - Ag (1 KA - 4 KA - 15 KA) 340 x 340 mils (see drawing) 100 mm, with std. <110> flat 330 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination
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1
S1233
Bulletin I0142J 01/01
Outline Table
All dimensions are in millimeters
Wafer Layout
TOP VIEW N 76 Basic Cells
All dimensions are in millimiters
2
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